Large displacement vertical translational actuator based on piezoelectric thin films.

نویسندگان

  • Zhen Qiu
  • Jeffrey S Pulskamp
  • Xianke Lin
  • Choong-Ho Rhee
  • Thomas Wang
  • Ronald G Polcawich
  • Kenn Oldham
چکیده

A novel vertical translational microactuator based on thin-film piezoelectric actuation is presented, using a set of four compound bend-up/bend-down unimorphs to produce translational motion of a moving platform or stage. The actuation material is a chemical-solution deposited lead-zirconate-titanate (PZT) thin film. Prototype designs have shown as much as 120 μm of static displacement, with 80-90 μm displacements being typical, using four 920 μm long by 70 μm legs. Analytical models are presented that accurately describe nonlinear behavior in both static and dynamic operation of prototype stages when the dependence of piezoelectric coefficients on voltage is known. Resonance of the system is observed at a frequency of 200 Hz. The large displacement and high bandwidth of the actuators at low-voltage and low-power levels should make them useful to a variety of optical applications, including endoscopic microscopy.

برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

ثبت نام

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

منابع مشابه

Piezoelectric thin films: an integrated review of transducers and energy harvesting

Piezoelectric thin films offer a number of advantages in various applications, such as high energy density harvesters, a wide dynamic range, and high sensitivity sensors, as well as large displacement and low power consumption actuators. This review covers the available material forms and applications of piezoelectric thin films: lead zirconate titanate (PZT)-based thin films, lead-free piezoel...

متن کامل

Monotonic and fatigue testing of spring-bridged freestanding microbeams application for MEMS

An electroplating spring-bridge micro-tensile specimen is fabricated to carry out a series of monotonic tensile testing on it. Freestanding thin films were loaded by performing monotonic loading/unloading and tensiontension fatigue experiments. Loading was applied using a piezoelectric actuator with 0.1 μm resolution connected through pin hole into the test chip specimen. Loads were measured by...

متن کامل

Piezoelectric properties of (K,Na)NbO3 thin films deposited on (001)SrRuO3/Pt/MgO substrates.

(K(x),Na(1-x))NbO(3) (KNN) thin films were deposited on (001)SrRuO(3)/(001)Pt/(001)MgO substrates by RF-magnetron sputtering, and their piezoelectric properties were investigated. The x-ray diffraction measurements indicated that the KNN thin films were epitaxially grown with the c-axis orientation in the perovskite tetragonal system. The lattice constant of the c-axis increased with increasing...

متن کامل

Modeling of Piezoelectric Tube Actuators

A new dynamic model is presented for piezoelectric tube actuators commonly used in high-precision instruments. The model captures coupling between motions in all three axes such as bending motion due to a supposedly pure extension of the actuator. Both hysteresis and creep phenomena are included in the overall actuator model permitting modeling nonlinear sensitivity in the voltage to displaceme...

متن کامل

Design and Experimental Research of a Novel Stick-Slip Type Piezoelectric Actuator

A linear piezoelectric actuator based on the stick-slip principle is presented and tested in this paper. With the help of changeable vertical preload force flexure hinge, the designed linear actuator can achieve both large travel stick-slip motion and high-resolution stepping displacement. The developed actuator mainly consists of a bridge-type flexure hinge mechanism, a compound parallelogram ...

متن کامل

ذخیره در منابع من


  با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید

برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

ثبت نام

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

عنوان ژورنال:
  • Journal of micromechanics and microengineering : structures, devices, and systems

دوره 20 7  شماره 

صفحات  -

تاریخ انتشار 2010